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• 2n3819 Datasheet Pdf
• 2n3819 Jfet

Electronic ManufacturerPart noDatasheetElectronics DescriptionNXP SemiconductorsN-channel J-FETON SemiconductorJEET VHF/UHF Amplifier N-channel-DepletionList of Unclassifed Man.N-Channel JFETsNew Jersey Semi-Conduct.N-CHANNEL JFETSFairchild SemiconductorSFET RF,VHF, UHF, AmplitiersVishay SiliconixN-Channel JFETFairchild SemiconductorN-Channel RF AmplifierCentral Semiconductor C.SILICON N-CHANNEL JFETON SemiconductorJFET VHF/UHF AmplifierFairchild SemiconductorN-Channel RF Amplifier11.

2n3819 Datasheet Pdf

2N3819Datasheet (PDF)1.1. Size:65K philips1.2. Size:29K fairchildsemi2N3819N-Channel RF Amplifier• This device is designed for RF amplifier and mixer applicationsoperating up to 450MHz, and for analog switching requiring lowcapacitance.• Sourced from process 50.TO-9211.

2n3819 Jfet

SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings. TC=25°C unless otherwise notedSymbol Parameter Ratings UnitsVDG Drain-Gate Voltage 25 VVGS G1.3. Size:53K vishay2N3819Vishay SiliconixN-Channel JFETPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)v –8 –25 2 2FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise: 3 dB @ 400 MHzD High Quality of Amplification D Sample-and-Hold1.4. Size:170K onsemi2N3819JFET VHF/UHF AmplifierN–Channel – DepletionMAXIMUM RATINGSSymbol Value UnitDrain–Source Voltage VDS 25 Vdc3 DRAINDrain–Gate Voltage VDG 25 VdcGate–Source Voltage VGS 25 Vdc2Drain Current ID 100 mAdcGATEForward Gate Current IG(f) 10 mAdcTotal Device Dissipation PD1 SOURCE@ TA = 25°C 350 mWDerate above 25°C 2.8 mW/°CStorage Channel Te.